Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation

  1. Lookup NU author(s)
  2. Dr Suresh Uppal
  3. John Varzgar
  4. Dr Mehdi Kanoun
  5. Dr Sanatan Chattopadhyay
  6. Dr Sarah Olsen
  7. Professor Anthony O'Neill
Author(s)Uppal S, Varzgar JB, Kanoun M, Chattopadhyay S, Olsen SH, O'Neill AG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameMaterials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference
Conference LocationNice, France
Year of Conference2006
Date29 May - 2 June 2006
Volume135 (3)
Pages207-209
ISBN18734944
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PublisherElsevier SA
ActionsLink to this publication
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