Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer

  1. Lookup NU author(s)
  2. John Varzgar
  3. Dr Mehdi Kanoun
  4. Dr Suresh Uppal
  5. Dr Sanatan Chattopadhyay
  6. Dr Sarah Olsen
  7. Professor Anthony O'Neill
Author(s)Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Chandra P, Olsen SH, O'Neill AG, Hellstron P-E, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameMaterials Science and Engineering B: Advanced Functional Solid-state Materials. E-MRS Conference
Conference LocationNice, France
Year of Conference2006
Date29 May - 2 June 2006
VolumeB135
Pages203-206
ISBN18734944
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PublisherElsevier SA
ActionsLink to this publication
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