Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe

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  2. Dr Shibin Liu
  3. Professor Nick Cowern
Author(s)Sheu YM, Huang TY, Hu YP, Wang CC, Liu S, Duffy R, Heringa A, Roozeboom F, Cowern NEB, Griffin PB
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Conference on Simulation of Semiconductor Processes and Devices
Conference LocationTokyo, Japan
Year of Conference2005
Date1-3 September 2005
Volume
Pages75-78
ISBN4990276205
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PublisherIEEE
URLhttp://dx.doi.org/10.1109/SISPAD.2005.201476
DOI10.1109/SISPAD.2005.201476
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