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Lookup NU author(s): Dr Alton Horsfall, Sorin Soare, Professor Nick Wright, Professor Anthony O'Neill, Professor Steve BullORCiD
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The process-induced stress in interconnect structures in modern integrated circuits has a direct influence on the mean time to failure for the device. As the active devices are aggressively scaled to meet the constant demands of the industry, the interconnect structures are also being driven to smaller dimensions and this is increasing the demands made on material scientists to deliver high quality, stress-free metallization. We have demonstrated the measurement of process-induced stress in a single interconnect structure, fabricated in a CMOS compatible process, using a rotating beam sensor. We have shown its applicability in observing the variation in stress level from differing process conditions. Comparison of the rotation observed in the fabricated sensors with finite element simulation using ANSYS is discussed. The structure is suitable for use in a production environment and is scalable to deep sub-micron features for future technology nodes.
Author(s): Horsfall AB, Dos Santos JMM, Soare SM, Wright NG, O'Neill AG, Bull SJ, Walton AJ, Gundlach AM, Stevenson JTM
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
Year: 2003
Volume: 18
Issue: 11
Pages: 992-996
Print publication date: 01/11/2003
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
URL: http://dx.doi.org/10.1088/0268-1242/18/11/315
DOI: 10.1088/0268-1242/18/11/315
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