Benefits of high-k dielectrics in 4H-SiC trench MOSFETs

  1. Lookup NU author(s)
  2. Professor Nick Wright
  3. Nipapan Poolamai
  4. Dr Konstantin Vasilevskiy
  5. Dr Alton Horsfall
  6. Dr Christopher Johnson
Author(s)Wright NG, Poolamai N, Vassilevski KV, Horsfall AB, Johnson CM
Publication type Article
JournalMaterials Science Forum
Year2004
Volume457-460
Issue
Pages1433-1436
ISSN (print)0255-5476
ISSN (electronic)1422-6375
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PublisherTrans Tech Publications Ltd
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.1433
DOI10.4028/www.scientific.net/MSF.457-460.1433
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