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Effective thermal conductivity of porous solder layers

Lookup NU author(s): Dr Len Pritchard, Professor Paul Acarnley, Dr Christopher Johnson

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Abstract

Microscopic voids in the die attachment solder layers of power semiconductor devices degrade their overall thermal transfer performance. This paper presents analytical results of the effect of spherical and spheroidal void geometries on the thermal conductivity of bulk media. Analytical results are compared with axially symmetric and three-dimensional thermal simulations of single and multiple cavity defects in planar structures. The effective thermal conductivity of the die to case attachment solder layer of two commercial metal oxide semiconductor field effect transistor (MOSFET) devices is estimated using these results, with cavity dimensions and distributions obtained by electron microscopy. © 2004 IEEE.

Publication metadata

Author(s): Pritchard LS, Acarnley PP, Johnson CM

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Components and Packaging Technologies

Year: 2004

Volume: 27

Issue: 2

Pages: 259-267

Print publication date: 01/06/2004

ISSN (print): 1521-3331

ISSN (electronic): 1557-9972

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TCAPT.2004.828584

DOI: 10.1109/TCAPT.2004.828584

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