Toggle Main Menu Toggle Search

Open Access padlockePrints

Characteristics of thermally oxidized-Ti as a high-k gate dielectric on SiC metal-oxide-semiconductor devices

Lookup NU author(s): Nipapan Poolamai, Dr Rajat Mahapatra, Professor Nick Wright

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Publication metadata

Author(s): Poolamai N, Mahapatra R, Wright NG, Coleman PG, Burrows CP

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Meeting Abstracts: 208th Meeting of The Electrochemical Society

Year of Conference: 2005

Pages: 967

ISSN: 1091-8213

Publisher: Electrochemical Society, Inc.

Library holdings: Search Newcastle University Library for this item

ISBN: 21512035


Share