Characteristics of thermally oxidized-Ti as a high-k gate dielectric on SiC metal-oxide-semiconductor devices
- Lookup NU author(s)
- Nipapan Poolamai
- Dr Rajat Mahapatra
- Professor Nick Wright
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| Author(s) | | Poolamai N, Mahapatra R, Wright NG, Coleman PG, Burrows CP |
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| Publication type | | Conference Proceedings (inc. Abstract) |
| Conference Name | | Meeting Abstracts: 208th Meeting of The Electrochemical Society |
| Conference Location | | Los Angeles, California, USA |
| Year of Conference | | 2005 |
| Date | | 16-21 October 2005 |
| Volume | | MA 2005-02 |
| Pages | | 967 |
| | 10918213 |
| ISBN | | 21512035 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Electrochemical Society, Inc. |
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| Library holdings | | Search Newcastle University Library for this item |
