Characteristics of thermally oxidized-Ti as a high-k gate dielectric on SiC metal-oxide-semiconductor devices

  1. Lookup NU author(s)
  2. Nipapan Poolamai
  3. Dr Rajat Mahapatra
  4. Professor Nick Wright
Author(s)Poolamai N, Mahapatra R, Wright NG, Coleman PG, Burrows CP
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameMeeting Abstracts: 208th Meeting of The Electrochemical Society
Conference LocationLos Angeles, California, USA
Year of Conference2005
Legacy Date16-21 October 2005
VolumeMA 2005-02
Pages967
10918213
ISBN21512035
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PublisherElectrochemical Society, Inc.
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