Characteristics of thermally oxidized-Ti as a high-k gate dielectric on SiC metal-oxide-semiconductor devices

  1. Lookup NU author(s)
  2. Dr Rajat Mahapatra
  3. Nipapan Poolamai
  4. Professor Nick Wright
Author(s)Mahapatra R, Poolamai N, Wright NG, Chakraborty AK, Coleman KS, Das K, Ray SK, Coleman PG, Burrows CP
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameECS Transactions: 3rd International Symposium on High Dielectric Constant Gate Stacks, 208th Meeting of the Electrochemical Society
Conference LocationLos Angeles, California, USA
Year of Conference2005
Date16-21 October 2005
Volume1 (5)
Pages33-40
ISBN19386737
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PublisherElectrochemical Society, Inc.
URLhttp://dx.doi.org/10.1149/1.2209253
DOI10.1149/1.2209253
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