Browse by author
Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Professor Nick Wright, Irina Nikitina, Dr Alton Horsfall, Professor Anthony O'Neill, Dr Christopher Johnson
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
A graphite capping layer has been evaluated to protect the surface of patterned and selectively implanted 4H-SiC epitaxial wafers during post-implantation annealing. AZ-5214E photoresist was spun and baked in vacuum at temperatures ranging from 750 to 850 °C to form a continuous coating on both planar and mesa-etched SiC surfaces with features up to 2 μm in height. Complete conversion of the hydrogenated polymer-like film into nanocrystalline graphite layer was verified by Raman spectroscopy. The graphite capping layer remained undamaged and protected both planar and mesa-etched SiC surfaces during subsequent annealing in argon ambient at temperatures up to 1650 °C for 30 min. It effectively suppressed step bunching and dopant out-diffusion in implanted regions and simultaneously ensured that the un-implanted surface of the 4H-SiC epitaxial wafer remained free of contamination. Schottky barrier diodes formed on the un-implanted annealed surfaces displayed almost ideal characteristics.© 2005 TOP Publishing Ltd.
Author(s): Vassilevski KV, Wright NG, Nikitina IP, Horsfall AB, O'Neill AG, Uren MJ, Hilton KP, Masterton AG, Hydes AJ, Johnson CM
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
Year: 2005
Volume: 20
Issue: 3
Pages: 271-278
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
URL: http://dx.doi.org/10.1088/0268-1242/20/3/003
DOI: 10.1088/0268-1242/20/3/003
Altmetrics provided by Altmetric
