Theoretical investigations of the diffusion of Nitrogen-pair defects in Silicon

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  2. Richard Jones
  3. Dr Jonathan Goss
  4. Professor Patrick Briddon
Author(s)Fujita N, Jones R, Goss JP, Frauenheim T, Oberg S, Briddon PR
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameDiffusion and Defect Data Pt.B: Solid State Phenomena. 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy
Conference LocationGiens, France
Year of Conference2005
Date25-30 September 2005
Volume108-109
Pages407-412
10120394
ISBN9783908451136
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PublisherScitec Publications Ltd.
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