Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors

  1. Lookup NU author(s)
  2. Dr Sarah Olsen
  3. Professor Anthony O'Neill
  4. Dr Piotr Dobrosz
  5. Professor Steve Bull
  6. Luke Driscoll
  7. Dr Sanatan Chattopadhyay
  8. Dr Kelvin Kwa
Author(s)Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK
Publication type Article
JournalJournal of Applied Physics
Year2005
Volume97
Issue11
Pages1-9
ISSN (print)0021-8979
ISSN (electronic)1520-8850
Full text is available for this publication:
PublisherAmerican Institute of Physics
URLhttp://dx.doi.org/10.1063/1.1922582
DOI10.1063/1.1922582
Actions    Link to this publication
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