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Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices
Lookup NU author(s)
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
Professor Steve Bull
Professor Anthony O'Neill
Author(s)
Uppal S, Kanoun M, Chattopadhyay S, Agaiby R, Olsen SH, Bull SJ, O'Neill AG
Editor(s)
Pawlak, PJ
Publication type
Conference Proceedings (inc. Abstract)
Conference Name
Doping Engineering for Device Fabrication
Conference Location
San Francisco, USA
Year of Conference
2006
Date
18-19 April 2006
Volume
912
Pages
65-70
Series Title
Materials Research Society Symposium Proceedings
02729172
ISBN
9781558998681
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Publisher
Materials Research Society
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