Analysis of gate leakage in strained Si MOSFETs

  1. Lookup NU author(s)
  2. Dr Sarah Olsen
  3. Dr Mehdi Kanoun
  4. Mohamed Al-Areeki
  5. Rimoon Agaiby
  6. Goutan Dalapati
  7. Professor Anthony O'Neill
Author(s)Yan L, Olsen SH, Kanoun M, Al-Araimi M, Agaiby R, Dalapati GK, O'Neill AG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference Name 210th Electrochemical Society Meeting
Conference LocationCancun, Mexico
Year of Conference2006
Date29 October to 3 November 2006
Volume3
Pages1001-1012
Series Editor(s)
1938-5862
ISBN19386737
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PublisherECS Transactions, Electrochemical Society, Inc.
URLhttp://dx.doi.org/10.1149/1.2355894
DOI10.1149/1.2355894
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