Analysis of gate leakage in strained Si MOSFETs

  1. Lookup NU author(s)
  2. Dr Sarah Olsen
  3. Dr Mehdi Kanoun
  4. Mohamed Al-Areeki
  5. Rimoon Agaiby
  6. Goutan Dalapati
  7. Professor Anthony O'Neill
Author(s)Yan L, Olsen SH, Kanoun M, Al-Araimi M, Agaiby R, Dalapati GK, O'Neill AG
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference Name 210th Electrochemical Society Meeting
Conference LocationCancun, Mexico
Year of Conference2006
Legacy Date29 October to 3 November 2006
Volume3
Pages1001-1012
Series Editor(s)
1938-5862
ISBN19386737
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PublisherECS Transactions, Electrochemical Society, Inc.
URLhttp://dx.doi.org/10.1149/1.2355894
DOI10.1149/1.2355894
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