Doubling speed using strained Si/SiGe CMOS technology
- Lookup NU author(s)
- Dr Sarah Olsen
- Professor Anthony O'Neill
- Dr Sanatan Chattopadhyay
- Dr Kelvin Kwa
- Luke Driscoll
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| Author(s) | | Olsen SH, Temple M, O'Neill AG, Paul DJ, Chattopadhyay S, Kwa KSK, Driscoll LS |
| Editor(s) | | S. Zaima, S. Miyazaki, S. Takagi, M. Miyao, J. Murota |
| Publication type | | Conference Proceedings (inc. Abstract) |
| Conference Name | | Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) |
| Conference Location | | Awaji Island, Hyogo, Japan |
| Year of Conference | | 2005 |
| Date | | 23-26 May 2005 |
| Volume | | 508, issues 1-2 |
| Pages | | 338-341 |
| | 00406090 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Thin Solid Films: Elsevier |
| URL | | http://dx.doi.org/10.1016/j.tsf.2005.07.347 |
| DOI | | 10.1016/j.tsf.2005.07.347 |
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