Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method

  1. Lookup NU author(s)
  2. Goutan Dalapati
  3. Dr Sanatan Chattopadhyay
  4. Luke Driscoll
  5. Professor Anthony O'Neill
  6. Dr Kelvin Kwa
  7. Dr Sarah Olsen
Author(s)Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH
Publication type Article
JournalJournal of Applied Physics
Year2006
Volume99
Issue3
Pages034501
ISSN (print)0021-8979
ISSN (electronic)1520-8850
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PublisherAmerican Institute of Physics
URLhttp://dx.doi.org/10.1063/1.2161800
DOI10.1063/1.2161800
NotesArticle no. 034501 8 pages
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