Gate leakage mechanisms in strained Si devices

  1. Lookup NU author(s)
  2. Liang Yan
  3. Dr Sarah Olsen
  4. Dr Mehdi Kanoun
  5. Professor Anthony O'Neill
Author(s)Yan L, Olsen SH, Kanoun M, Agaiby R, O'Neill AG
Publication type Article
JournalJournal of Applied Physics
Year2006
Volume100
Issue10
Pages
ISSN (print)0021-8979
ISSN (electronic)1520-8850
Full text is available for this publication:
PublisherAmerican Institute of Physics
URLhttp://dx.doi.org/10.1063/1.2374191
DOI10.1063/1.2374191
NotesArticle no. 104507 6 pages
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