Gate leakage mechanisms in strained Si devices
- Lookup NU author(s)
- Liang Yan
- Dr Sarah Olsen
- Dr Mehdi Kanoun
- Professor Anthony O'Neill
|
|
|
|
| Author(s) | | Yan L, Olsen SH, Kanoun M, Agaiby R, O'Neill AG |
| Publication type | | Article |
| Journal | | Journal of Applied Physics |
| Year | | 2006 |
| Volume | | 100 |
| Issue | | 10 |
| Pages | | |
| ISSN (print) | | 0021-8979 |
| ISSN (electronic) | | 1520-8850 |
|
|
|
| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
|
|
|
| Publisher | | American Institute of Physics |
| URL | | http://dx.doi.org/10.1063/1.2374191 |
| DOI | | 10.1063/1.2374191 |
| Notes | | Article no. 104507
6 pages |
|
|
Actions | |   |
