Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique
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- Arup Saha
- Dr Sanatan Chattopadhyay
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| Author(s) | | Saha AR, Chattopadhyay S, Das R, Bose C, Maiti CK |
| Publication type | | Article |
| Journal | | Solid-State Electronics |
| Year | | 2006 |
| Volume | | 50 |
| Issue | | 7-8 |
| Pages | | 1269-1275 |
| ISSN (print) | | 0038-1101 |
| ISSN (electronic) | | 1879-2405 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | Pergamon |
| URL | | http://dx.doi.org/10.1016/j.sse.2006.06.001 |
| DOI | | 10.1016/j.sse.2006.06.001 |
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