Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique

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  2. Arup Saha
  3. Dr Sanatan Chattopadhyay
Author(s)Saha AR, Chattopadhyay S, Das R, Bose C, Maiti CK
Publication type Article
JournalSolid-State Electronics
Year2006
Volume50
Issue7-8
Pages1269-1275
ISSN (print)0038-1101
ISSN (electronic)1879-2405
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PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.sse.2006.06.001
DOI10.1016/j.sse.2006.06.001
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