Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

  1. Lookup NU author(s)
  2. Goutan Dalapati
  3. Dr Sanatan Chattopadhyay
  4. Dr Kelvin Kwa
  5. Dr Sarah Olsen
  6. Dr Yuk Tsang
  7. Rimoon Agaiby
  8. Professor Anthony O'Neill
  9. Dr Piotr Dobrosz
  10. Professor Steve Bull
Author(s)Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, Tsang YL, Agaiby R, O'Neill AG, Dobrosz P, Bull SJ
Publication type Article
JournalIEEE Transactions on Electron Devices
Year2006
Volume53
Issue5
Pages1142-1152
ISSN (print)0018-9383
ISSN (electronic)1557-9646
Full text is available for this publication:
PublisherIEEE
URLhttp://dx.doi.org/10.1109/TED.2006.872086
DOI10.1109/TED.2006.872086
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