Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

  1. Lookup NU author(s)
  2. Dr Suresh Uppal
  3. Dr Mehdi Kanoun
  4. John Varzgar
  5. Dr Sanatan Chattopadhyay
  6. Dr Sarah Olsen
  7. Professor Anthony O'Neill
Author(s)Uppal S, Kanoun M, Varzgar JB, Chattopadhyay S, Olsen S, O'Neill A
Publication type Article
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Year2006
Volume135
Issue3
Pages207-209
ISSN (print)0921-5107
ISSN (electronic)1873-4944
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherElsevier SA
URLhttp://dx.doi.org/10.1016/j.mseb.2006.08.006
DOI10.1016/j.mseb.2006.08.006
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