Quantifying self-heating effects with scaling in globally strained Si MOSFETs

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  2. Rimoon Agaiby
  3. Yang Yang
  4. Dr Sarah Olsen
  5. Professor Anthony O'Neill
Author(s)Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C
Publication type Article
JournalSolid-State Electronics
Year2007
Volume51
Issue11-12
Pages1473-1478
ISSN (print)0038-1101
ISSN (electronic)1879-2405
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PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.sse.2007.09.012
DOI10.1016/j.sse.2007.09.012
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