Quantifying self-heating effects with scaling in globally strained Si MOSFETs

  1. Lookup NU author(s)
  2. Rimoon Agaiby
  3. Yang Yang
  4. Dr Sarah Olsen
  5. Professor Anthony O'Neill
Author(s)Agaiby R, Yang Y, Olsen SH, O'Neill AG, Eneman G, Verheyen P, Loo R, Claeys C
Publication type Article
JournalSolid-State Electronics
Year2007
Volume51
Issue11-12
Pages1473-1478
ISSN (print)0038-1101
ISSN (electronic)1879-2405
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
PublisherPergamon
URLhttp://dx.doi.org/10.1016/j.sse.2007.09.012
DOI10.1016/j.sse.2007.09.012
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