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Bended gate-all-around nanowire MOSFET: A device with enhanced carrier mobility due to oxidation-induced tensile stress

Lookup NU author(s): Dr Piotr Dobrosz, Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200 MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures. © 2007 IEEE.

Publication metadata

Author(s): Moselund KE, Dobrosz P, Olsen S, Pott V, De Michielis L, Tsamados D, Bouvet D, O'Neill A, Ionescu AM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: International Electron Devices Meeting (IEDM)

Year of Conference: 2007

Pages: 191-194

ISSN: 0163-1918

Publisher: IEEE

URL: http://dx.doi.org/10.1109/IEDM.2007.4418899

DOI: 10.1109/IEDM.2007.4418899

Library holdings: Search Newcastle University Library for this item

ISBN: 9781424415076

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