Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC

  1. Lookup NU author(s)
  2. Dr Rajat Mahapatra
  3. Dr Alton Horsfall
  4. Dr Sanatan Chattopadhyay
  5. Professor Nick Wright
Author(s)Mahapatra R, Chakraborty AK, Horsfall AB, Chattopadhyay S, Wright NG, Coleman KS
Publication type Article
JournalJournal of Applied Physics
Year2007
Volume102
Issue2
Pages
ISSN (print)0021-8979
ISSN (electronic)1089-7550
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PublisherAmerican Institute of Physics
URLhttp://dx.doi.org/10.1063/1.2756521
DOI10.1063/1.2756521
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