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Lookup NU author(s): Dr Rajat Mahapatra, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright
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Hf O2 films were grown on Si O2 4H-SiC and SiON4H-SiC layers by deposition of metallic Hf in an electron beam evaporation system followed by thermal oxidation. X-ray photoelectron spectroscopy confirmed the formation of stoichiometric Hf O2 films. There is no evidence of formation of hafnium silicide or carbon pileup at the surface as well as at the interfacial layer. Electrical measurements show the presence of fewer trapped charges in the Hf O2 SiON gate dielectric stack compared to Hf O2 Si O2 stack with a comparable interface state density. The Hf O2 SiON stack layer improves leakage current characteristics with a higher breakdown field and has smaller flatband voltage shift under electrical stress, indicating improved reliability. © 2007 American Institute of Physics.
Author(s): Mahapatra R, Chakraborty AK, Horsfall AB, Chattopadhyay S, Wright NG, Coleman KS
Publication type: Article
Publication status: Published
Journal: Journal of Applied Physics
Year: 2007
Volume: 102
Issue: 2
ISSN (print): 0021-8979
ISSN (electronic): 1089-7550
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.2756521
DOI: 10.1063/1.2756521
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