Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate

  1. Lookup NU author(s)
  2. Dr Rajat Mahapatra
  3. Nipapan Poolamai
  4. Dr Alton Horsfall
  5. Dr Sanatan Chattopadhyay
  6. Professor Nick Wright
Author(s)Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP
Publication type Article
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Year2007
Volume25
Issue1
Pages217-223
ISSN (print)1071-1023
ISSN (electronic)1520-8567
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PublisherAmerican Institute of Physics
URLhttp://dx.org/10.1116/1.2433976
DOI10.1116/1.2433976
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