Impact of strain on the design of low-power high-speed circuits

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  2. Dr Sanatan Chattopadhyay
  3. Professor Alex Yakovlev
Author(s)Ramakrishnan H, Maharatna K, Chattopadhyay S, Yakovlev A
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameIEEE International Symposium on Circuits and Systems
Conference LocationNew Orleans, LA
Year of Conference2007
Legacy Date27-30 May 2007
Volume
Pages1153-1156
ISBN1424409209
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In this article, we explore the impact of strain on circuit performance when strained silicon (s-Si) devices are used for designing low-power high-speed circuits. Emphasis has been given on the evaluation of noise characteristics and low-power performance along with the delay characteristics under different channel straining conditions. An inverter circuit has been used for performance evaluation through simulation where the device simulator is calibrated with experimental device data. The result shows a great promise for s-Si technology in digital applications which require high throughput and low power.
PublisherIEEE
URLhttp://dx.doi.org/10.1109/ISCAS.2007.378254
DOI10.1109/ISCAS.2007.378254
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