Experiments and models for electron mobility as a function of carrier concentration in heavily doped silicon and strained silicon

  1. Lookup NU author(s)
  2. Dr Nick Bennett
  3. Professor Nick Cowern
Author(s)Bennett N, Cowern N, Bourdelle K, Sealy B
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling
Conference LocationNapa, California
Year of Conference2009
Legacy Date26-29 April 2009
Sponsor(s)Imago Scientific Instruments, Capres A/S
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.