Experiments and models for electron mobility as a function of carrier concentration in heavily doped silicon and strained silicon
- Lookup NU author(s)
- Dr Nick Bennett
- Professor Nick Cowern
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| Author(s) | | Bennett N, Cowern N, Bourdelle K, Sealy B |
| Editor(s) | | |
| Publication type | | Conference Proceedings (inc. Abstract) |
| Conference Name | | International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling |
| Conference Location | | Napa, California |
| Year of Conference | | 2009 |
| Date | | 26-29 April 2009 |
| Volume | | |
| Pages | | |
| Sponsor(s) | | Imago Scientific Instruments, Capres A/S |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| Publisher | | - |