Experiments and models for electron mobility as a function of carrier concentration in heavily doped silicon and strained silicon

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  2. Dr Nick Bennett
  3. Professor Nick Cowern
Author(s)Bennett N, Cowern N, Bourdelle K, Sealy B
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling
Conference LocationNapa, California
Year of Conference2009
Date26-29 April 2009
Volume
Pages
Sponsor(s)Imago Scientific Instruments, Capres A/S
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