Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture

  1. Lookup NU author(s)
  2. Dr Yuk Tsang
  3. Dr Sanatan Chattopadhyay
  4. Dr Kelvin Kwa
  5. Goutan Dalapati
  6. Rouzet Agaiby
  7. Professor Anthony O'Neill
  8. Dr Sarah Olsen
Author(s)Tsang YL, Chattopadhyay S, Kwa KSK, Dalapati GK, Agaiby R, O'Neill AG, Olsen SH
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS-2006)
Conference LocationCalcutta, India
Year of Conference2006
Source Publication Date4-6 January 2006
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