Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices

  1. Lookup NU author(s)
  2. Goutan Dalapati
  3. Dr Kelvin Kwa
  4. Dr Sarah Olsen
  5. Dr Sanatan Chattopadhyay
  6. Professor Anthony O'Neill
  7. Dr Yuk Tsang
  8. Rouzet Agaiby
Author(s)Dalapati GK, Kwa KSK, Olsen SH, Chattopadhyay S, O'Neill AG, Tsang YL, Agaiby R
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Conference on Electronic and Photonic Materials, Devices and Systems (EPMDS)
Conference LocationIndia
Year of Conference2006
Date4-6 January 2006
Volume
Pages
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.