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Lookup NU author(s): Dr Christopher Johnson, Professor Anthony O'Neill
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A mechanistic model for the oxidation of SiC is presented. The model explains the observed anisotropic oxidation rate of SIC in terms of the effect of weakening/strengthening of SI-C bonds arising from the on-going incorporation of highly electronegative oxygen atoms into the crystal lattice. A novel Monte Carlo based oxidation simulator, OXYSIM, is presented and used to explore the proposed SiC oxidation model. The extraction of key process metrics (such as oxide thickness, interface roughness and oxide defect density) is discussed. (C) 1999 Elsevier Science S.A. All rights reserved.
Author(s): O'Neill AG; Johnson CM; Wright NG
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98)
Year of Conference: 1999
Pages: 468-471
ISSN: 2161-6221
Publisher: Elsevier
URL: http://dx.doi.org/10.1016/S0921-5107(98)00557-1
DOI: 10.1016/S0921-5107(98)00557-1
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science and Engineering B - Solid State Materials for Advanced Technology
ISBN:
