Enhanced dopant diffusion effects in 4H silicon carbide

  1. Lookup NU author(s)
  2. Dr Gordon Phelps
  3. Professor Nick Wright
  4. Dr Graeme Chester
  5. Dr Christopher Johnson
  6. Professor Anthony O'Neill
  7. Dr Sylvie Ortolland
  8. Dr Alton Horsfall
  9. Dr Konstantin Vasilevskiy
Author(s)Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM
Editor(s)Yoshida, S., Nishino, S., Harima, H., Kimoto, T.
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Conference on Silicon Carbide and Related Materials
Conference LocationTsukuba, Japan
Year of Conference2002
Date28 October - 2 November 2001
Volume389-3
Pages855-858
Series TitleMaterials Science Forum
ISBN9780878498949
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PublisherTrans Tech Publications Ltd.
URLhttp://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.855
DOI10.4028/www.scientific.net/MSF.389-393.855
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