SiGe HMOSFET differential pair
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- Stephen Badcock
- Professor Anthony O'Neill
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| Author(s) | | Badcock SG; O'Neill AG; Michelakis K; Despotopoulos S; Papavassiliou C; Toumazou C |
| Editor(s) | | |
| Publication type | | Conference Proceedings (inc. Abstract) |
| Conference Name | | IEEE International Symposium on Circuits and Systems |
| Conference Location | | Sydney, NSW, Australia |
| Year of Conference | | 2001 |
| Date | | 6-9 May 2001 |
| Volume | | |
| Pages | | 679-682 |
| ISBN | | 0780366859 |
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| Full text for this publication is not currently held within this repository. Alternative links are provided below where available. |
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| A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were obtained for the performance of a differential pair. At the specified power of 1.25 mW the input range of the SiGe differential pair at which the percent nonlinearity is below 1%, is roughly twice that of its Si counterpart. Additionally the SiGe circuit is more power efficient since an increase of the power consumption from 1 mW to 1.25 mW accounts for an improvement of about 40% in its input range, as compared to only 10% for Si. (13 References). |
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| Publisher | | IEEE |
| URL | | http://dx.doi.org/10.1109/ISCAS.2001.921947 |
| DOI | | 10.1109/ISCAS.2001.921947 |
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| Library holdings | | Search Newcastle University Library for this item |
