Atomistic Simulations of Epitaxial Regrowth of As-doped Silicon

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  2. Dr Joo Chul Yoon
Author(s)Yoon JC, Dunham S
Editor(s)Pawlak, BJ; Pelaz, ML; Law, M; Suguro, K
Publication type Conference Proceedings (inc. Abstract)
Conference NameMRS Proceedings Spring: Symposium E, Doping Engineering for Front-end Processing
Conference LocationSan Francisco, California, USA
Year of Conference2008
Legacy Date25-27 March 2008
Volume1070
Pages1070-E03-09
ISBN9781605110400
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We conducted molecular dynamics (MD) simulations of solid phase epitaxial growth of As-doped Si using a Tersoff potential characterized via comparison to DFT calculations, including energies of AsnV clusters. The Si:As systems were initialized by amorphizing the surface region of crystalline silicon via Si ion implantation and/or selective melting. The remaining crystalline region provides dual function of controlling temperature in system without perturbing regrowth and providing seed for recrystallization. After recrystallization, isolated As atoms occupy substitutional sites, with the average number of nearest neighbors for As changing from about 3.3 in amorphous Si to 4 after crystallization. We observe V incorporation associated with high As concentrations. A small fraction of isolated As atoms have associated vacancies, while vacancies are incorporated in the majority of cases in which there are sites with two As neighbors. These observations are consistent with our previous model developed to explain kinetics of As shallow junction formation which assumed V incorporation at sites with 2 or more As nearest neighbors to account for experimental data.
PublisherMaterials Research Society
URLhttp://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12446&DID=215030&action=detail
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