Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology

  1. Lookup NU author(s)
  2. Professor Nick Wright
  3. Dr Christopher Johnson
  4. Professor Anthony O'Neill
  5. Dr Alton Horsfall
  6. Dr Sylvie Ortolland
  7. Kazuhiro Adachi
  8. Dr Gordon Phelps
Author(s)Wright NG; Ortolland S; Phelps GJ; ONeill AG; Horsfall A; Adachi K; Johnson CM; Knights AP; Coleman PG; Burrows CP
Editor(s)Agarwal, A
Publication type Conference Proceedings (inc. Abstract)
Conference NameSilicon Carbide - Materials, Processing and Devices. Symposium (Materials Research Society Symposium Proceedings
Conference LocationBoston USA
Year of Conference2001
Date27-29 November 2000
Volume640
PagesH5
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The effects of post-implant anneal conditions on the level of residual damage resulting from nitrogen and boron implants after different anneal processes are investigated using the positron annihilation spectroscopy (PAS) technique. It is shown that after implantation there is a substantial defect concentration significantly below the range of the implants. However such damage is almost completely recovered after anneal in contrast with the damage close to the implant range point. Such residual damage has a strong effect on the electrical characteristics of double implanted bipolar transistors principally though reduction in carrier mobility and lifetime. It is shown that the precise implant and anneal conditions play a strong role in the level of such damage and the subsequent electrical performance of bipolar devices. (6 References).
PublisherMaterials Research Society
NotesAgarwal A Skowronski M Cooper JA Jr Janzen E 30.1-5. Warrendale, PA, USA. Silicon Carbide - Materials, Processing and Devices. Symposium. Boston, MA, USA. 27-29 Nov. 2000.