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Material requirements and design considerations for Si/SiGe heterojunction CMOS

Lookup NU author(s): Stephen Badcock, Professor Anthony O'Neill

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Abstract

Five vertical architecture options fur SiGe/Si heterojunction CMOS devices are compared using technology computer-aided design. The benefit of using SiGe over conventional MOSFETs is set to increase for future technology generations. We investigate the impact of material degradation, to determine the minimum requirements needed for HMOS to offer real advantages over conventional CMOS. (C) 2000 Academic Press.

Publication metadata

Author(s): Badcock S, O'Neill A

Publication type: Article

Publication status: Published

Journal: Superlattices and Microstructures

Year: 2000

Volume: 28

Issue: 5-6

Pages: 363-368

ISSN (print): 0749-6036

ISSN (electronic): 1096-3677

Publisher: Academic Press

URL: http://dx.doi.org/10.1006/spmi.2000.0935

DOI: 10.1006/spmi.2000.0935

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