Design and optimization of nanoCMOS devices using predictive atomistic physics-based process modeling

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  2. Dr Biao Yang
  3. Professor Nick Cowern
Author(s)Colombeau B, Mok KRC, Yeong SH, Indajang B, Tan O, Yang B, Li Y, Bénistant F, Jaraiz M, Cowern NEB, Chu S
Editor(s)
Publication type Conference Proceedings (inc. Abstract)
Conference NameInternational Electron Devices Meeting
Conference LocationSan Francisco, California, USA
Year of Conference2006
Legacy DateDecember 2006
Volume
Pages1-4
ISBN1424404398
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PublisherIEEE
URLhttp://dx.doi.org/10.1109/IEDM.2006.346790
DOI10.1109/IEDM.2006.346790
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