ePrints

Double implanted power MESFET technology in 4H-SiC

Lookup NU author(s): Dr Alton Horsfall, Dr Sylvie Ortolland, Dr Christopher Johnson

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

A MESFET structure has been used to determine the preferred annealing strategy for depletion mode devices in SiC. Based on Boron and Nitrogen implantation the device removes the need for multi-epitaxial layer growth. It is shown that the annealing strategy for the implants has a strong influence on the electrical characteristics of the device, and the adopted two step anneal technique increases the current density of the device by increasing the mobility of the carriers by an order of magnitude. Further, the reduction in temperature of the channel anneal step has reduced the surface roughness of the device to that of the unimplanted wafer. This decrease in the surface roughness gives a lower leakage current through the gate contact of the device, allowing a higher gate bias to be used.

Publication metadata

Author(s): Horsfall AB, Ortolland S, Wright NG, Johnson CM, Knights AP

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: The 3rd European Conference on Silicon Carbide and Related Materials 2000

Year of Conference: 2000

Pages: 707-710

ISSN: 978878498734

Publisher: Trans Tech Publications

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.707

DOI: 10.4028/www.scientific.net/MSF.353-356.707

Library holdings: Search Newcastle University Library for this item

ISBN:

Share