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Electronic properties of stacking faults in 15R-SiC

Lookup NU author(s): Professor Patrick Briddon

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Abstract

A first-principles calculation of stacking faults in 15R-SiC is reported. All the geometrically distinguishable stacking faults which can be introduced by the glide of partial dislocations in (0001)-basal planes are investigated: there exist as many as five different stacking faults in 15R-SiC. Electronic properties and stacking fault energies of these extended defects are studied based on the density functional theory in the local density approximation. Stacking fault energies are also calculated using the axial next nearest neighbor Ising (ANNNI) model.


Publication metadata

Author(s): Iwata H, Lindefelt U, Oberg S, Briddon PR

Editor(s): Bergman, P., Janzen, E.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM)

Year of Conference: 2002

Pages: 531-534

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.531

DOI: 10.4028/www.scientific.net/MSF.433-436.531

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN:


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