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Stable hydrogen pair trapped at carbon impurities in silicon

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Local mode spectroscopy and ab initio modeling are used to investigate two trigonal defects found in carbon rich Si into which H had been in-diffused. Isotopic shifts with D and C-13 are reported along with the effect of uniaxial stress. Ab-initio modeling studies suggest that the two defects are two forms of the CH2* complex where one of the two hydrogen atoms lies at an anti-bonding site attached to C or Si respectively. The two structures are nearly degenerate and possess vibrational modes in good agreement with those observed experimentally. The defects are energetically favorable in comparison with separated C-s and H-2 in Si and may represent aggregation sites for hydrogen.


Publication metadata

Author(s): Markevich VP, Hourahine B, Newman RC, Jones R, Kleverman M, Lindstrom JL, Murin LI, Suezawa M, Oberg S, Briddon PR

Editor(s): Fisher, D.J.

Publication type: Book Chapter

Publication status: Published

Book Title: Defects and Diffusion in Semiconductors: An Annual Retrospective VII

Year: 2003

Volume: 221-222

Pages: 1-9

Print publication date: 01/01/2003

Publisher: Trans Tech Publications Ltd.

Place Published: Zurich, Switzerland

URL: http://dx.doi.org/10.4028/www.scientific.net/DDF.221-223.1

DOI: 10.4028/www.scientific.net/DDF.221-223.1

Library holdings: Search Newcastle University Library for this item

ISBN: 9783908451044


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