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Electrical activity of Er and Er-O centers in silicon

Lookup NU author(s): Dr Jose Coutinho, Dr Michael Shaw, Professor Patrick Briddon

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Abstract

Spin-polarized density functional calculations are carried out on Er and Er-oxygen defects in crystalline Si. We find that the interstitial site is favored but the diffusion barrier of Er-i is only 1.9 eV, and inevitably Er-i forms complexes with impurities and intrinsic defects following postimplantation anneals. Er forms many defects with oxygen, and we argue that optically inactive Er2Si2O7 precipitates coexist alongside active Er-i-O-n clusters. The latter are unstable when neutral and possess a range of second donor levels around E-c-0.1 eV. We suggest that those with either deep levels or very shallow ones are inefficient room-temperature optical centers. The Er-i-O-3 defect has a donor level and symmetry consistent with observations of the room-temperature luminescence intensity and low-temperature crystal-field splitting.


Publication metadata

Author(s): Prezzi D, Eberlein TAG, Jones R, Filhol JS, Coutinho J, Shaw MJ, Briddon PR

Publication type: Article

Publication status: Published

Journal: Physical Review B

Year: 2005

Volume: 71

Issue: 24

ISSN (print): 1098-0121

ISSN (electronic): 1550-235X

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevB.71.245203

DOI: 10.1103/PhysRevB.71.245203


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