Lookup NU author(s): Dr John Hedley,
Emeritus Professor James Burdess,
Dr Alun Harris
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Raman microscopy, using a novel line focus configuration, has been used here to study boron concentration distributions and depth profiles in silicon for two different sources of dopant. Changes in the Raman phonon peak frequency for boron doped silicon have been calibrated against concentration by comparison with SIMS data and a relationship between Raman shift and lattice strain has been obtained.
Author(s): Bowden M, Gardiner DJ, Lourenco MA, Hedley J, Wood D, Burdess JS, Harris AJ
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 1998 MRS Spring Symposium
Year of Conference: 1998
Publisher: Materials Research Society
Notes: Conference code: 48894
Cited By (since 1996): 2
Export Date: 1 September 2009
Language of Original Document: English
Correspondence Address: Bowden, M.; Univ of Northumbria at Newcastle, Newcastle upon Tyne, United Kingdom