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Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method

Lookup NU author(s): Goutan Dalapati, Dr Sanatan Chattopadhyay, Luke Driscoll, Professor Anthony O'Neill, Dr Kelvin Kwa, Dr Sarah Olsen

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Author(s): Dalapati GK, Chattopadhyay S, Driscoll LS, O'Neill AG, Kwa KSK, Olsen SH

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2006

Volume: 99

Issue: 3

ISSN (print): 0021-8979

ISSN (electronic): 1089-7550

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2161800

DOI: 10.1063/1.2161800


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