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Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Lookup NU author(s): John Varzgar, Dr Mehdi Kanoun, Dr Suresh Uppal, Dr Sanatan Chattopadhyay, Dr Yuk Tsang, Dr Enrique Escobedo-Cousin, Dr Sarah Olsen, Professor Anthony O'Neill

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Author(s): Varzgar JB, Kanoun M, Uppal S, Chattopadhyay S, Tsang YL, Escobedo-Cousin E, Olsen SH, O'Neill AG, Hellstrom PE, Edholm J, Ostling M, Lyutovich K, Oehme M, Kasper E

Publication type: Article

Publication status: Published

Journal: Material Science and Engineering B

Year: 2006

Volume: 135

Issue: 3

Pages: 203-206

ISSN (electronic): 1873-4944

Publisher: Elsevier SA

URL: http://dx.doi.org/10.1016/j.mseb.2006.08.005

DOI: 10.1016/j.mseb.2006.08.005

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