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Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon

Lookup NU author(s): Dr Nick Bennett, Professor Nick Cowern

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Abstract

Strain engineering plays a pivotal role in modern devices due to the advantages it offers in enhancing carrier mobility, mu. In addition to strain, epsilon, carrier concentration, N, also determines mobility and an understanding of the functional dependence mu(N,epsilon) at various levels of strain is vital. Although well established for low and moderate doping, currently little is known about mu(N) for high carrier concentrations (>10(19) cm(-3)) in strained Si. We present experimental data to fill this void, allowing an extension of the current model for mu(N) [Masetti , IEEE Trans. Electron Devices 30, 764 (1983)] to account for strain. We also consider the influence of strain induced from dopant atoms. Experiments show the effects of tensile strain as a mobility enhancer are reduced but still significant at high doping concentrations. The model reproduces this effect and accounts for mu(N,epsilon) across the full range of doping concentrations.

Publication metadata

Author(s): Bennett NS, Cowern NEB, Sealy BJ

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2009

Volume: 94

Issue: 25

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.3159821

DOI: 10.1063/1.3159821

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