Lookup NU author(s): Dr Alton Horsfall,
Professor Nick Wright,
Dr Konstantin Vasilevskiy,
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Although Silicon Carbide has become the material of choice for high power applications in a range of extreme environments, the interest in creating active chemical sensors requires the development of transistors for additional control circuits to operate in these environments. Despite the recent advances in the quality of oxide layers on SiC, the mobility of inversion layers is still low and this will affect the maximum frequency of the operation for these devices. We present simulation results which indicate that a delta channel, in both n-channel and p-channel structures, is suitable for transistors used with these low level signals. By varying the doping levels of the device we have shown that the optimum delta doping for this application is 1.43x10(19) cm(-3) for both n and p channel devices. We then show the effects of high temperatures on the delta FET devices and make comparisons with standard SiC MOSFET devices.
Author(s): Horsfall AB, Prentice CHA, Tappin P, Bhatnagar P, Wright NG, Vassilevski K, Nikitina IP
Editor(s): RP Devaty, DJ Larkin and SE Saddow
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials 2005 (ICSCRM 2005)
Year of Conference: 2005
Number of Volumes: 2
Publisher: Trans Tech Publications
Notes: Book title: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005
Library holdings: Search Newcastle University Library for this item