Lookup NU author(s): Dr Jon Goss,
Professor Patrick Briddon
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Density-functional theory is used to model interstitial iron and its complexes with aluminum in Si-rich SiGe alloys with Ge concentration up to 8%. Both short-range and long-range defect-Ge interactions are considered. It is found that Fe prefers Si-rich regions. The shifts of the electrical levels of Fe-acceptor pairs are calculated using the marker method. (C) 2008 Elsevier Ltd. All rights reserved.
Author(s): Carvalho A, Coutinho J, Jones R, Barroso M, Goss JP, Briddon PR
Editor(s): Claeys C; Peaker T; Fompeyrine J; Frank M; Vanhellemont J
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS
Year of Conference: 2008
Publisher: Materials Science in Semiconductor Processing: Pergamon
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