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Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si

Lookup NU author(s): Professor Patrick Briddon

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Abstract

We present a detailed picture of the electronic structure of donor-vacancy complexes in Ge-doped silicon and Si-doped germanium Clusters to mimic Si-rich and Ge-rich SiGe alloys, respectively Jahn-Teller effects and electrical levels were investigated in both Si-rich and Ge-rich end compositions It is shown that while Ge atoms act as efficient traps for mobile E-centers in Si-rich alloys, Si atoms in Ge-rich material do not have this ability A detailed linear combination of atomic orbitals model is proposed for VP-Ge and VP-Si complexes in Si1-xGex and Ge1-xSix, where the orbital filling order is driven by the larger electron affinity of Si atoms when compared to Ge. (C) 2009 Elsevier B.V. All rights reserved


Publication metadata

Author(s): Coutinho J, Castro F, Torres VJB, Carvalho A, Barroso M, Briddon PR

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Symposium on Silicon and Germanium Issues for Future CMOS Devices

Year of Conference: 2010

Pages: 2381-2385

ISSN: 0040-6090

Publisher: Thin Solid Films: Elsevier SA

URL: http://dx.doi.org.10.1016/j.tsf.2009.09.168

DOI: 10.1016/j.tsf.2009.09.168

Library holdings: Search Newcastle University Library for this item

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