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Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill

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Abstract

The performance of surface channel MOSFET devices is dependent on the Si/SiO2 interface roughness. This paper examines the performance demonstrated by strained Si/SiGe heterojunction n-channel MOSFET devices (HNMOSFETs) fabricated on ultra-low pressure CVD (ULPCVD) material compared with unstrained Si control devices. The surface channel HNMOSFETs were found to exhibit performance enhancements in terms of transconductance of approximately 135% compared with their Si counterparts. In addition, the electrical characteristics of the HNMOSFETs displayed increased uniformity and improvements in the peak transconductance in excess of 75% compared with equivalent devices fabricated on strained Si/SiGe GS-MBE material. Atomic force microscopy and transmission electron microscopy showed that the favourable characteristics of the ULPCVD strained Si/SiGe devices are due to reduced cross-hatch severity of the ULPCVD material, which is shown to decrease nanoscale roughness at the Si/SiO2 interface.


Publication metadata

Author(s): Olsen SH, O'Neill AG, Norris DJ, Cullis AG, Fobelets K, Kemhadjian HA

Publication type: Article

Publication status: Published

Journal: Solid State Electronics

Year: 2003

Volume: 47

Issue: 8

Pages: 1289-1295

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/S0038-1101(03)00060-1

DOI: 10.1016/S0038-1101(03)00060-1


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