Toggle Main Menu Toggle Search

ePrints

Ab initio investigation of phosphorus and boron diffusion in germanium

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

P and B diffusion has been modeled in Ge using ab initio methods along with the formation energies and electrical levels of various Px Vy defects expected to be important in the deactivation of P in heavily n-doped Ge. The calculated activation barrier for B diffusion is found to be substantially lower than the measured barrier. However, the exceptionally large pre-exponential factor in the measured diffusivity points to a Meyer-Neldel rule operating and accounting for the discrepancy. The magnitude of the theoretical diffusivity is about a factor 10 lower than observed. For P diffusion, the experimental and theoretical results are in much closer agreement. The formation energy calculations show that all Px Vy clusters are stable with respect to their component defects, and all but P4 V are predicted to introduce acceptor levels into the band gap. A simple analysis of possible formation mechanisms and Coulombic contributions suggests that as in Si, P3 V is the most important compensating center in heavily n-doped Ge. © 2008 Elsevier Ltd. All rights reserved.


Publication metadata

Author(s): Janke C, Jones R, Coutinho J, Oberg S, Briddon P

Publication type: Article

Publication status: Published

Journal: Materials Science in Semiconductor Processing

Year: 2008

Volume: 11

Issue: 5

Pages: 324-327

Print publication date: 01/10/2008

ISSN (print): 13698001

ISSN (electronic):

URL: http://dx.doi.org/10.1016/j.mssp.2008.07.002

DOI: 10.1016/j.mssp.2008.07.002

Notes: E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share