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Complexes of self-interstitials with oxygen atoms in germanium

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge crystals have been studied by combining experimental and theoretical methods. Self-interstitials were created in oxygen-rich Ge crystals by irradiation with MeV electrons at 80 K, and I-O-related complexes were studied by means of infrared absorption spectroscopy, while the density functional theory was used to model structures, local vibrational modes and electronic properties of IO and I2O centers. It is argued that two absorption lines at 674 and 602 cm-1, which develop upon annealing of irradiated Ge:O crystals in the temperature range 180-220 K, are related to IO complexes, while another set of bands at 713 and 803 cm-1 is related to I2O. Those assignments are supported by the comparison with the calculated local vibrational modes of the defects. © 2008 Elsevier Ltd. All rights reserved.


Publication metadata

Author(s): Khirunenko L, Pomozov Y, Sosnin M, Markevich V, Murin L, Litvinov V, Carvalho A, Jones R, Coutinho J, Öberg S, Briddon P

Publication type: Article

Publication status: Published

Journal: Materials Science in Semiconductor Processing

Year: 2008

Volume: 11

Issue: 5

Pages: 344-347

ISSN (print): 1369-8001

ISSN (electronic): 1873-4081

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.mssp.2008.07.007

DOI: 10.1016/j.mssp.2008.07.007

Notes: E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS


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