Toggle Main Menu Toggle Search

ePrints

Intrinsic defects in CdTe and CdZnTe alloys

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

The Cd vacancy (VCd) and Te anti-site (TeCd) are two dominant defects in CdTe and CdZnTe alloys grown in Te-rich conditions. We examine the properties of these two intrinsic defects in Cd1 - x ZnxTe alloys with x < 0.5 using first-principles calculations. It is shown that Cd vacancies become progressively more favourable with increasing Zn content, in contrast with Te anti-sites, which show the opposite behaviour, explaining the trend towards p-type conductivity in Cd1 - x ZnxTe. © 2009 Elsevier B.V. All rights reserved.


Publication metadata

Author(s): Carvalho A, Tagantsev A, Oberg S, Briddon P, Setter N

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 25th International Conference on Defects in Semiconductors

Year of Conference: 2009

Pages: 5019-5021

ISSN: 0921-4526

Publisher: Physica B: Condensed Matter: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2009.08.251

DOI: 10.1016/j.physb.2009.08.251


Actions

    Link to this publication


Share