Lookup NU author(s): Professor Patrick Briddon
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The Cd vacancy (VCd) and Te anti-site (TeCd) are two dominant defects in CdTe and CdZnTe alloys grown in Te-rich conditions. We examine the properties of these two intrinsic defects in Cd1 - x ZnxTe alloys with x < 0.5 using first-principles calculations. It is shown that Cd vacancies become progressively more favourable with increasing Zn content, in contrast with Te anti-sites, which show the opposite behaviour, explaining the trend towards p-type conductivity in Cd1 - x ZnxTe. © 2009 Elsevier B.V. All rights reserved.
Author(s): Carvalho A, Tagantsev A, Oberg S, Briddon P, Setter N
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 25th International Conference on Defects in Semiconductors
Year of Conference: 2009
Publisher: Physica B: Condensed Matter: Elsevier BV