ePrints

Trivacancy in silicon: A combined DLTS and ab-initio modeling study

Lookup NU author(s): Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Deep level transient spectroscopy and ab-initio modeling have been used for identification of energy levels and structure of trivacancy (V3) in Si. It is found that in the neutral charge state the V3 is bistable, with the "fourfold" configuration being lower in energy than the (1 1 0) planar configuration. V3 in the (1 1 0) planar configuration gives rise to two acceptor levels at Ec-0.36 eV and Ec-0.46 eV in the gap, while in the "fourfold" configuration the defect has trigonal symmetry and an acceptor level at Ec-0.075 eV. © 2009 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Markevich V, Peaker A, Lastovskii S, Murin L, Coutinho J, Markevich A, Torres V, Briddon P, Dobaczewski L, Monakhov E, Svensson B

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 25th International Conference on Defects in Semiconductors

Year of Conference: 2009

Pages: 4565-4567

ISSN: 0921-4526

Publisher: Physica B: Condensed Matter: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2009.08.142

DOI: 10.1016/j.physb.2009.08.142

Share